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Vgs - Gate-Source Voltage :
Minimum Operating Temperature :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
STP80PF55
1+
$2.920
10+
$2.480
100+
$1.980
500+
$1.740
RFQ
23,550
In-stock
STMicroelectronics MOSFET P-Ch 55 Volt 80 Amp 16 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si P-Channel - 55 V - 80 A 18 mOhms     Enhancement
IRLIB9343PBF
1+
$1.540
10+
$1.320
100+
$1.010
500+
$0.892
RFQ
3,400
In-stock
IR / Infineon MOSFET 1 P-CH -55V HEXFET 105mOhms 31nC 20 V Through Hole TO-220-3 - 40 C + 175 C Tube 1 Channel Si P-Channel - 55 V - 14 A 170 mOhms - 1 V 31 nC Enhancement
IRF5305PBF
1+
$1.130
10+
$0.957
100+
$0.735
500+
$0.650
RFQ
229,100
In-stock
Infineon Technologies MOSFET MOSFT PCh -55V -31A 60mOhm 42nC 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si P-Channel - 55 V - 31 A 60 mOhms - 4 V 42 nC  
IRF9Z24NPBF
Per Unit
$0.890
RFQ
5,500
In-stock
IR / Infineon MOSFET MOSFT PCh -55V -12A 175mOhm 12.7nC 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si P-Channel - 55 V - 12 A 175 mOhms - 4 V 12.7 nC  
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