Build a global manufacturer and supplier trusted trading platform.
Packaging :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPD110N12N3GATMA1
1+
$1.710
10+
$1.450
100+
$1.160
500+
$1.020
2500+
$0.782
RFQ
3,367
In-stock
Infineon Technologies MOSFET MV POWER MOS 20 V SMD/SMT TO-252-3 - 55 C + 175 C Reel   Si N-Channel 120 V 75 A 9.2 mOhms 3 V 49 nC Enhancement  
IPB144N12N3 G
1+
$1.420
10+
$1.220
100+
$0.931
500+
$0.823
1000+
$0.650
RFQ
2,700
In-stock
Infineon Technologies MOSFET N-Ch 120V 56A D2PAK-2 OptiMOS 3 20 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 120 V 56 A 12.3 mOhms 2 V 49 nC Enhancement OptiMOS
IPP114N12N3 G
GET PRICE
RFQ
47,000
In-stock
Infineon Technologies MOSFET N-Ch 120V 75A TO220-3 OptiMOS 3 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 120 V 75 A 11.4 mOhms   49 nC   OptiMOS
IPB144N12N3GATMA1
GET PRICE
RFQ
9,830
In-stock
Infineon Technologies MOSFET N-Ch 120V 56A D2PAK-2 OptiMOS 3 20 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 120 V 56 A 12.3 mOhms 2 V 49 nC Enhancement OptiMOS
Page 1 / 1