- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,350
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Vishay Semiconductors | MOSFET 30V 8A 4.4W AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 8 A, 8 A | 0.013 Ohms, 0.013 Ohms | 1.5 V, 1.5 V | 30 nC, 30 nC | Enhancement | TrenchFET | ||
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VIEW | Vishay Semiconductors | MOSFET Dual N-Channel 30V AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 30 A, 30 A | 0.0058 Ohms, 0.0058 Ohms | 1.5 V, 1.5 V | 39 nC, 39 nC | Enhancement | TrenchFET | |||
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VIEW | Vishay Semiconductors | MOSFET N Ch 30Vds 20Vgs AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 8 A, 8 A | 0.01 Ohms, 0.01 Ohms | 1.5 V, 1.5 V | 47 nC, 47 nC | Enhancement | ||||
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VIEW | Vishay Semiconductors | MOSFET N-Channel 30V AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 8 A, 8 A | 0.0138 Ohms, 0.0138 Ohms | 1.5 V, 1.5 V | 26 nC, 26 nC | Enhancement | TrenchFET |
