- Mounting Style :
- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Tradename :
17 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,592
In-stock
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Fairchild Semiconductor | MOSFET LOW VOLTAGE | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 70 A | 8.7 mOhms | Enhancement | PowerTrench | |||||
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2,125
In-stock
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Fairchild Semiconductor | MOSFET LOW VOLTAGE | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 70 A | 8.7 mOhms | Enhancement | PowerTrench | |||||
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1,600
In-stock
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Fairchild Semiconductor | MOSFET 40V N-Channel PwrTrch MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 70 A | 6.8 mOhms | Enhancement | PowerTrench | |||||
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768
In-stock
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Fairchild Semiconductor | MOSFET 40V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 70 A | 3.9 mOhms | Enhancement | PowerTrench | |||||
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1,949
In-stock
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onsemi | MOSFET NFET 40V SPCL TR | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 70 A | 13.2 mOhms | 3.5 V | 45 nC | |||||
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1,847
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 70A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 70 A | 5.3 mOhms | 2 V | 32 nC | Enhancement | OptiMOS | |||
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571
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 70A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 70 A | 4 mOhms | 2 V | 41 nC | Enhancement | OptiMOS | |||
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678
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 70 A | 3.5 mOhms | 2 V | 56 nC | Enhancement | ||||
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1,000
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 70A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 70 A | 5.3 mOhms | 2 V | 32 nC | Enhancement | ||||
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3,988
In-stock
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IR / Infineon | MOSFET 40V Dual N Channel HEXFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V | 70 A | 5.9 mOhms | 3 V | 40 nC | Enhancement | ||||
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7,500
In-stock
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Diodes Incorporated | MOSFET 40V 175c N-Ch Enh 20Vgss 7.3mOhm 70A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 70 A | 5 mOhms | 1 V | 29.1 nC | Enhancement | ||||
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800
In-stock
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Fairchild Semiconductor | MOSFET 40V N-Ch PowerTrench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 70 A | 6.8 mOhms | Enhancement | PowerTrench | |||||
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800
In-stock
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Fairchild Semiconductor | MOSFET 40V N-Ch PowerTrench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 70 A | 3.9 mOhms | Enhancement | PowerTrench | |||||
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VIEW | Infineon Technologies | MOSFET N-Ch 40V 70A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 70 A | 4 mOhms | 2 V | 41 nC | Enhancement | OptiMOS | |||
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548
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 70A DPAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 70 A | 6.8 mOhms | Enhancement | OptiMOS | |||||
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870
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 70A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | GaN | N-Channel | 40 V | 70 A | 5.2 mOhms | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 40V 70A TO220-3 OptiMOS-T | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 70 A | 7.1 mOhms | Enhancement | OptiMOS |
