- Manufacture :
- Mounting Style :
- Package / Case :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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39,600
In-stock
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Infineon Technologies | MOSFET 40V 90A 2.5mOhm 89nC StrongIRFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 90 A | 2.4 mOhms | 2.2 V to 3.9 V | 89 nC | Enhancement | StrongIRFET | ||||
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2,846
In-stock
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IR / Infineon | MOSFET 40V, 195A, 1.9 mOhm 91 nC Qg, Logic Lvl | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 254 A | 2.4 mOhms | 1 V | 91 nC | Enhancement | StrongIRFET | ||||
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1,550
In-stock
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IR / Infineon | MOSFET 40V, 195A, 1.9 mOhm 91 nC Qg, Logic Lvl | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 254 A | 2.4 mOhms | 1 V | 91 nC | Enhancement | StrongIRFET | ||||
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239
In-stock
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Infineon Technologies | MOSFET 40V, 90A, 2.5 mOhm 89 nC Qg, I-Pak | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 180 A | 2.4 mOhms | 3.9 V | 134 nC | Enhancement | StrongIRFET | |||||
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56
In-stock
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IXYS | MOSFET 40V/270A TrenchT4 Power MOSFET | 15 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 270 A | 2.4 mOhms | 2 V | 182 nC | Enhancement | TrenchT4 | ||||
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48
In-stock
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IXYS | MOSFET 40V/270A TrenchT4 Power MOSFET | 15 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 270 A | 2.4 mOhms | 2 V | 182 nC | Enhancement | TrenchT4 | ||||
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4,000
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 160A D2PAK-6 OptiMOS-T | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 160 A | 2.4 mOhms | Enhancement | OptiMOS |