- Mounting Style :
- Package / Case :
- Qg - Gate Charge :
- Tradename :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
1,480
In-stock
|
onsemi | MOSFET T6D3F 40V NFET | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 102 A | 2.7 mOhms | 2.5 V | 23 nC | Enhancement | ||||
|
|
12,000
In-stock
|
Infineon Technologies | MOSFET MOSFT 40V 190A 3.7mOhm 100nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 180 A | 2.7 mOhms | 4 V | 100 nC | |||||
|
|
2,926
In-stock
|
IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 3.7mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 180 A | 2.7 mOhms | 2 V | 150 nC | Enhancement | ||||
|
|
7,135
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 90 A | 2.7 mOhms | 2 V | 66 nC | Enhancement | OptiMOS | |||
|
|
2,451
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 90 A | 2.7 mOhms | 2 V | 66 nC | Enhancement | ||||
|
|
594
In-stock
|
Fairchild Semiconductor | MOSFET 40V N-Channel PowerTrench MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 80 A | 2.7 mOhms | Enhancement | PowerTrench | |||||
|
|
2,300
In-stock
|
Diodes Incorporated | MOSFET 40V N-Ch Enh FET Low Rdson | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.7 mOhms | 4 V | 68.6 nC | Enhancement |
