- Manufacture :
- Vgs - Gate-Source Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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31
In-stock
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Toshiba | MOSFET N-Ch 40V 4670pF 63.4nC 128A 87W | 20 V | Through Hole | TO-220-3 | + 175 C | 1 Channel | Si | N-Channel | 40 V | 128 A | 2.5 mOhms | 1.4 V | 63.4 nC | Enhancement | |||||
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400
In-stock
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Texas instruments | MOSFET 40V N-Channel NexFET Power MOSFET 3-TO-220 -55 t... | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.4 mOhms | 1.4 V | 153 nC | Enhancement |
