- Manufacture :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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39,600
In-stock
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Infineon Technologies | MOSFET 40V 90A 2.5mOhm 89nC StrongIRFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 90 A | 2.4 mOhms | 2.2 V to 3.9 V | 89 nC | Enhancement | StrongIRFET | ||||
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2,191
In-stock
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IR / Infineon | MOSFET MOSFT 40V 119A 5.5mOhm 59nC Qg | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 119 A | 5.5 mOhms | 4 V | 89 nC | ||||||||
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VIEW | Infineon Technologies | MOSFET 40V AUTOGRADE 1 N-CH HEXFET 7.9mOhms | 20 V | SMD/SMT | DirectFET-L6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 156 A | 7.9 mOhms | 89 nC | Enhancement |