- Mounting Style :
- Package / Case :
- Qg - Gate Charge :
- Tradename :
8 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,775
In-stock
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Infineon Technologies | MOSFET 40V, 120A, 2.7 mOhm 56 nC Qg, Logic Lvl | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 164 A | 3.5 mOhms | 1 V | 56 nC | Enhancement | StrongIRFET | ||||
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1,145
In-stock
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IR / Infineon | MOSFET MOSFT 40V 162A 4mOhm 160nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 162 A | 3.5 mOhms | 4 V | 160 nC | ||||||
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494
In-stock
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Fairchild Semiconductor | MOSFET N-channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 3.5 mOhms | 2 V | 23.5 nC | Enhancement | PowerTrench | ||||
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395
In-stock
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Fairchild Semiconductor | MOSFET N-CH PowerTrench N-Ch PowerTrench Mos | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 80 A | 3.5 mOhms | Enhancement | PowerTrench | ||||||
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183
In-stock
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IXYS | MOSFET 220 Amps 40V 0.0035 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 220 A | 3.5 mOhms | Enhancement | |||||||
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678
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 70 A | 3.5 mOhms | 2 V | 56 nC | Enhancement | |||||
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58
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 80A TO220-3 OptiMOS-T | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 80 A | 3.5 mOhms | Enhancement | OptiMOS | ||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 3.5 mOhms | Enhancement | OptiMOS |