- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
11 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,263
In-stock
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IR / Infineon | MOSFET 40V, 375A, .59 mOhm 220 nC Qg, Logic Lvl | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 564 A | 970 uOhms | 1 V | 220 nC | Enhancement | StrongIRFET | ||||
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4,416
In-stock
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Fairchild Semiconductor | MOSFET 40/20V 550A NChnl LL Power Trench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 7.3 mOhms | 1 V | 30 nC | Enhancement | |||||
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5,845
In-stock
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Fairchild Semiconductor | MOSFET 40V 80A NChnl Logic Level Power Trench | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 2.9 mOhms | 1 V | 83 nC | Enhancement | PowerTrench | ||||
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1,600
In-stock
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Fairchild Semiconductor | MOSFET N-Channel Power Trench MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 110 A | 2 mOhms | 1 V | 186 nC | Enhancement | PowerTrench | ||||
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13,472
In-stock
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Infineon Technologies | MOSFET 40V, 195A, 1.25 mOhm 180 nC Qg, Logic Lvl | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 414 A | 1.6 mOhms | 1 V | 180 nC | Enhancement | StrongIRFET | |||
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2,775
In-stock
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Infineon Technologies | MOSFET 40V, 120A, 2.7 mOhm 56 nC Qg, Logic Lvl | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 164 A | 3.5 mOhms | 1 V | 56 nC | Enhancement | StrongIRFET | ||||
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2,846
In-stock
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IR / Infineon | MOSFET 40V, 195A, 1.9 mOhm 91 nC Qg, Logic Lvl | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 254 A | 2.4 mOhms | 1 V | 91 nC | Enhancement | StrongIRFET | ||||
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1,550
In-stock
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IR / Infineon | MOSFET 40V, 195A, 1.9 mOhm 91 nC Qg, Logic Lvl | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 254 A | 2.4 mOhms | 1 V | 91 nC | Enhancement | StrongIRFET | ||||
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507
In-stock
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Fairchild Semiconductor | MOSFET 40V 100A N-Chnl Pwr Trench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.9 mOhms | 1 V | 96 nC | Enhancement | PowerTrench | ||||
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795
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.8 mOhms | 1 V | 181 nC | Enhancement | |||||
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7,500
In-stock
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Diodes Incorporated | MOSFET 40V 175c N-Ch Enh 20Vgss 7.3mOhm 70A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 70 A | 5 mOhms | 1 V | 29.1 nC | Enhancement |