- Manufacture :
- Package / Case :
- Minimum Operating Temperature :
- Rds On - Drain-Source Resistance :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,604
In-stock
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IR / Infineon | MOSFET 40V Dual N Channel HEXFET | 20 V | SMD/SMT | PQFN-8 | - 55C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V | 43 A | 10 mOhms | 3.9 V | 22 nC | Enhancement | ||||
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1,333
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 | 20 V | SMD/SMT | TDSON-8 | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V | 20 A | 7.6 mOhms | OptiMOS | |||||||
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9,224
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 | 20 V | SMD/SMT | TDSON-8 | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V | 20 A | 12.2 mOhms | OptiMOS | |||||||
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3,988
In-stock
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IR / Infineon | MOSFET 40V Dual N Channel HEXFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V | 70 A | 5.9 mOhms | 3 V | 40 nC | Enhancement |
