- Rds On - Drain-Source Resistance :
-
- 1.2 mOhms (2)
- 1.25 mOhms (1)
- 1.4 mOhms (1)
- 1.5 mOhms (1)
- 1.6 mOhms (4)
- 1.7 mOhms (1)
- 1.8 mOhms (3)
- 1.88 mOhms (2)
- 1.98 mOhms (1)
- 2.1 mOhms (1)
- 2.2 mOhms (1)
- 2.2 Ohms (1)
- 2.3 mOhms (2)
- 2.4 mOhms (1)
- 2.5 mOhms (3)
- 2.6 mOhms (2)
- 2.7 mOhms (2)
- 3.1 mOhms (2)
- 3.3 mOhms (3)
- 3.4 mOhms (1)
- 3.5 mOhms (5)
- 3.6 mOhms (1)
- 3.7 mOhms (1)
- 3.9 mOhms (1)
- 4 mOhms (2)
- 4.1 mOhms (1)
- 4.2 mOhms (1)
- 4.25 mOhms (1)
- 4.3 mOhms (3)
- 4.6 mOhms (1)
- 5.7 mOhms (1)
- 5.9 mOhms (2)
- 6.1 mOhms (1)
- 6.2 mOhms (1)
- 6.4 mOhms (1)
- 6.5 mOhms (1)
- 7 mOhms (1)
- 7.1 mOhms (1)
- 9 mOhms (1)
- 970 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 100 nC (1)
- 103 nC (1)
- 107 nC (2)
- 108 nC (1)
- 134 nC (2)
- 14 nC, 107 nC (1)
- 140 nC (1)
- 150 nC (2)
- 180 nC (1)
- 216 nC (2)
- 26 nC (1)
- 300 nC (2)
- 324 nC (1)
- 340 nC (1)
- 377 nC (1)
- 405 nC (1)
- 41 nC (2)
- 42 nC (1)
- 43 nC (4)
- 460 nC (1)
- 56 nC (2)
- 58 nC (1)
- 590 nC (1)
- 62 nC (2)
- 63.4 nC (2)
- 65 nC (1)
- 66 nC (1)
- 68 nC (1)
- 90 nC (1)
- 91 nC (1)
- 93 nC (1)
63 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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12,000
In-stock
|
Infineon Technologies | MOSFET MOSFT 40V 190A 3.7mOhm 100nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 180 A | 2.7 mOhms | 4 V | 100 nC | ||||||
|
3,130
In-stock
|
Infineon Technologies | MOSFET MOSFT 40V 343A 1.7mOhm 108nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 343 A | 1.4 mOhms | 2.5 V | 108 nC | ||||||
|
991
In-stock
|
Fairchild Semiconductor | MOSFET 40V N-Channel Power Trench | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 277 A | 2.2 mOhms | Enhancement | PowerTrench | ||||||
|
GET PRICE |
13,472
In-stock
|
Infineon Technologies | MOSFET 40V, 195A, 1.25 mOhm 180 nC Qg, Logic Lvl | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 414 A | 1.6 mOhms | 1 V | 180 nC | Enhancement | StrongIRFET | |||
|
1,021
In-stock
|
STMicroelectronics | MOSFET N-Ch 40 Volt 120 Amp | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 4.6 mOhms | Enhancement | |||||||
|
2,775
In-stock
|
Infineon Technologies | MOSFET 40V, 120A, 2.7 mOhm 56 nC Qg, Logic Lvl | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 164 A | 3.5 mOhms | 1 V | 56 nC | Enhancement | StrongIRFET | ||||
|
2,615
In-stock
|
IR / Infineon | MOSFET 40V 1 N-CH HEXFET 2.2mOhms 43nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 9 mOhms | 62 nC | Enhancement | ||||||
|
2,846
In-stock
|
IR / Infineon | MOSFET 40V, 195A, 1.9 mOhm 91 nC Qg, Logic Lvl | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 254 A | 2.4 mOhms | 1 V | 91 nC | Enhancement | StrongIRFET | ||||
|
594
In-stock
|
Fairchild Semiconductor | MOSFET 40V N-Channel PowerTrench MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 80 A | 2.7 mOhms | Enhancement | PowerTrench | ||||||
|
439
In-stock
|
Fairchild Semiconductor | MOSFET 40V 100A 2.1mOhm N-Chan Power Trench | 20 V | Through Hole | TO-3PN-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 30 A | 2.1 mOhms | Enhancement | PowerTrench | ||||||
|
2,326
In-stock
|
Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 95 A | 3.6 mOhms | 2.2 V | 68 nC | Enhancement | StrongIRFET | ||||
|
427
In-stock
|
Infineon Technologies | MOSFET Auto 40V N-Ch FET 0.97mOhm 195A | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 195 A | 1.2 mOhms | 2.2 V to 3.9 V | 300 nC | Enhancement | CoolIRFet | ||||
|
734
In-stock
|
IR / Infineon | MOSFET HEXFET Power MOSFET 40V Single N-Channel | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 426 A | 970 mOhms | 2.2 V | 460 nC | Enhancement | StrongIRFET | ||||
|
316
In-stock
|
Fairchild Semiconductor | MOSFET 40V/80A/2.8ohm/N-CH POWERTRENCH | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 23 A | 3.1 mOhms | Enhancement | PowerTrench | ||||||
|
395
In-stock
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Fairchild Semiconductor | MOSFET N-CH PowerTrench N-Ch PowerTrench Mos | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 80 A | 3.5 mOhms | Enhancement | PowerTrench | ||||||
|
410
In-stock
|
Fairchild Semiconductor | MOSFET 40V, 110A, 2.2m Ohm NChannel PowerTrench | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 110 A | 2.2 Ohms | 2.83 V | 14 nC, 107 nC | PowerTrench | |||||
|
750
In-stock
|
Fairchild Semiconductor | MOSFET 40V 80A N-Chnl Power Trench MOSFET | 20 V | Through Hole | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 5.9 mOhms | 2 V | 43 nC | Enhancement | |||||
|
463
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel Power Trench MOSFET | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 80 A | 6.4 mOhms | 2 V | 43 nC | Enhancement | PowerTrench | ||||
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592
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 80A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 80 A | 4.1 mOhms | Enhancement | OptiMOS | ||||||
|
183
In-stock
|
IXYS | MOSFET 220 Amps 40V 0.0035 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 220 A | 3.5 mOhms | Enhancement | |||||||
|
GET PRICE |
4,110
In-stock
|
Infineon Technologies | MOSFET Auto 40V N-Ch FET 1.9mOhm 120A | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 2.5 mOhms | 2.2 V to 3.9 V | 107 nC | Enhancement | CoolIRFet | |||
|
571
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 70A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 70 A | 4 mOhms | 2 V | 41 nC | Enhancement | OptiMOS | ||||
|
22
In-stock
|
IXYS | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 600 A | 1.5 mOhms | 1.5 V | 590 nC | Enhancement | HiPerFET | ||||
|
104
In-stock
|
IXYS | MOSFET TRENCHT2 PWR MOSFET 40V 500A | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 40 V | 500 A | 1.6 mOhms | 3.5 V | 405 nC | Enhancement | TrenchT2 | |||||
|
228
In-stock
|
Infineon Technologies | MOSFET Auto 40V N-Ch FET 1.65mOhm 100A | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.98 mOhms | 2.2 V to 3.9 V | 103 nC | Enhancement | CoolIRFet | ||||
|
678
In-stock
|
Infineon Technologies | MOSFET MV POWER MOS | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 70 A | 3.5 mOhms | 2 V | 56 nC | Enhancement | |||||
|
116
In-stock
|
IR / Infineon | MOSFET Auto 40V N-Ch FET 1.4mOhm 195A | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 195 A | 1.8 mOhms | 2 V to 4 V | 150 nC | Enhancement | CoolIRFet | ||||
|
604
In-stock
|
IXYS | MOSFET 100 Amps 40V | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 7 mOhms | Enhancement | |||||||
|
280
In-stock
|
IR / Infineon | MOSFET Auto 40V N-Ch FET 1.4mOhm 195A | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 195 A | 1.8 mOhms | 2 V to 4 V | 150 nC | Enhancement | CoolIRFet | ||||
|
290
In-stock
|
IR / Infineon | MOSFET MOSFET, 40V, 195A, 1 216 nC Qg, TO-220AB | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 317 A | 1.25 mOhms | 2.2 V | 324 nC | Enhancement | StrongIRFET |