- Mounting Style :
- Rds On - Drain-Source Resistance :
-
- 1.2 mOhms (5)
- 1.4 mOhms (3)
- 1.58 mOhms (2)
- 1.6 mOhms (2)
- 1.8 mOhms (2)
- 1.9 mOhms (2)
- 11 mOhms (1)
- 2 mOhms (5)
- 2.1 mOhms (3)
- 2.3 mOhms (3)
- 2.5 mOhms (2)
- 2.7 mOhms (1)
- 2.8 mOhms (1)
- 2.9 mOhms (1)
- 3.2 mOhms (1)
- 3.3 mOhms (2)
- 3.4 mOhms (1)
- 3.5 mOhms (2)
- 3.7 mOhms (3)
- 3.9 mOhms (3)
- 4 mOhms (3)
- 4.2 mOhms (2)
- 4.6 mOhms (1)
- 5 mOhms (1)
- 5.2 mOhms (1)
- 5.3 mOhms (2)
- 5.8 mOhms (3)
- 5.9 mOhms (1)
- 6 mOhms (1)
- 6.1 mOhms (1)
- 6.2 mOhms (1)
- 6.8 mOhms (2)
- 7 mOhms (1)
- 7.6 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
66 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,287
In-stock
|
Fairchild Semiconductor | MOSFET 40V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 1.9 mOhms | Enhancement | PowerTrench | ||||||
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1,600
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel Power Trench MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 110 A | 2 mOhms | 1 V | 186 nC | Enhancement | PowerTrench | ||||
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1,015
In-stock
|
STMicroelectronics | MOSFET N-Ch 40V 4mOhm 80A STripFET VI DeepGATE | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 4 mOhms | 4 V | 65 nC | ||||||
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2,926
In-stock
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IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 3.7mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 180 A | 2.7 mOhms | 2 V | 150 nC | Enhancement | |||||
|
1,040
In-stock
|
IR / Infineon | MOSFET MOSFT 40V 195A 1.7mOhm 160nC Qg | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 340 A | 1.4 mOhms | 4 V | 160 nC | ||||||
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3,031
In-stock
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IR / Infineon | MOSFET Auto 40V N-Ch FET 0.97mOhm 195A | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 195 A | 1.2 mOhms | 2.2 V to 3.9 V | 300 nC | Enhancement | CoolIRFet | ||||
|
602
In-stock
|
STMicroelectronics | MOSFET N-Channel 40V Pwr Mosfet | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 160 A | 2 mOhms | Enhancement | |||||||
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1,910
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.2 mOhms | 2 V | 250 nC | Enhancement | OptiMOS | ||||
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1,992
In-stock
|
IR / Infineon | MOSFET Auto 40V N-Ch FET 1.4mOhm 195A | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 195 A | 1.8 mOhms | 2 V to 4 V | 150 nC | Enhancement | CoolIRFet | ||||
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1,000
In-stock
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STMicroelectronics | MOSFET N-CH 40V STripFET 80A | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 5 mOhms | Enhancement | |||||||
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1,600
In-stock
|
Fairchild Semiconductor | MOSFET 40V N-Channel PwrTrch MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 70 A | 6.8 mOhms | Enhancement | PowerTrench | ||||||
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800
In-stock
|
Fairchild Semiconductor | MOSFET 40V N-Ch PowerTrench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 1.9 mOhms | Enhancement | |||||||
|
768
In-stock
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Fairchild Semiconductor | MOSFET 40V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 70 A | 3.9 mOhms | Enhancement | PowerTrench | ||||||
|
842
In-stock
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Fairchild Semiconductor | MOSFET 40V N-Channel PowerTrench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 25 A | 2.3 mOhms | Enhancement | PowerTrench | ||||||
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1,145
In-stock
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IR / Infineon | MOSFET MOSFT 40V 162A 4mOhm 160nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 162 A | 3.5 mOhms | 4 V | 160 nC | ||||||
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790
In-stock
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Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 3.7mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 3.7 mOhms | 4 V | 100 nC | Enhancement | |||||
|
656
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 2 mOhms | Enhancement | OptiMOS | ||||||
|
1,590
In-stock
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STMicroelectronics | MOSFET Automotive-grade N-channel 40 V, 5.5 mOhm typ., 80 A, STripF... | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 6 mOhms | 2 V | 36 nC | Enhancement | |||||
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1,847
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 70A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 70 A | 5.3 mOhms | 2 V | 32 nC | Enhancement | OptiMOS | ||||
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798
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.58 mOhms | 2 V | 134 nC | Enhancement | |||||
|
750
In-stock
|
Fairchild Semiconductor | MOSFET 40V 80A N-Chnl Power Trench MOSFET | 20 V | Through Hole | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 5.9 mOhms | 2 V | 43 nC | Enhancement | |||||
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98
In-stock
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Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 2.3mOhms 160nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 280 A | 2.3 mOhms | 160 nC | Enhancement | ||||||
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331
In-stock
|
IR / Infineon | MOSFET 40V 1 N-CH HEXFET 4mOhms 160nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 162 A | 4 mOhms | 160 nC | Enhancement | ||||||
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574
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 3.3 mOhms | 51 nC | OptiMOS | ||||||
|
225
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.2 mOhms | 1.2 V | 346 nC | Enhancement | OptiMOS | ||||
|
373
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 100A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.1 mOhms | 2 V | 90 nC | Enhancement | OptiMOS | ||||
|
205
In-stock
|
onsemi | MOSFET NFET 40V 116A PB | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 116 A | 5.8 mOhms | Enhancement | |||||||
|
625
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 90A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 90 A | 2.1 mOhms | 91 nC | OptiMOS | ||||||
|
1,010
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 4.2 mOhms | 33 nC | OptiMOS | ||||||
|
311
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.58 mOhms | 2 V | 134 nC | Enhancement | OptiMOS |