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6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | Tradename | |
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8,939
In-stock
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Fairchild Semiconductor | MOSFET SO-8 | 12 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 11 A | 13 mOhms | Enhancement | PowerTrench | ||||
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3,001
In-stock
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Fairchild Semiconductor | MOSFET Power MOSFET | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 11 A | 107 mOhms | Enhancement | |||||
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3,146
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 185mOhms 13.3nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 11 A | 265 mOhms | 13.3 nC | Enhancement | ||||
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3,134
In-stock
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Fairchild Semiconductor | MOSFET TO-251AA N-Ch Power | 16 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 11 A | 107 mOhms | Enhancement | |||||
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3,448
In-stock
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Fairchild Semiconductor | MOSFET 11a 60V 0.107 Ohm Logic Level N-Ch | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 11 A | 77 mOhms | Enhancement | |||||
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1,716
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 185mOhms 13.3nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 11 A | 265 mOhms | 13.3 nC | Enhancement |