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Vgs - Gate-Source Voltage :
Packaging :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Qg - Gate Charge Channel Mode Tradename
FDS4672A
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RFQ
8,939
In-stock
Fairchild Semiconductor MOSFET SO-8 12 V SMD/SMT SO-8 - 55 C + 175 C Reel 1 Channel Si N-Channel 40 V 11 A 13 mOhms   Enhancement PowerTrench
RFD3055LESM9A
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RFQ
3,001
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Fairchild Semiconductor MOSFET Power MOSFET 16 V SMD/SMT TO-252-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 60 V 11 A 107 mOhms   Enhancement  
IRLR120NTRPBF
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RFQ
3,146
In-stock
Infineon Technologies MOSFET 100V 1 N-CH HEXFET 185mOhms 13.3nC 16 V SMD/SMT TO-252-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 100 V 11 A 265 mOhms 13.3 nC Enhancement  
RFD3055LE
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RFQ
3,134
In-stock
Fairchild Semiconductor MOSFET TO-251AA N-Ch Power 16 V Through Hole TO-251-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 60 V 11 A 107 mOhms   Enhancement  
HUF76407D3ST
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RFQ
3,448
In-stock
Fairchild Semiconductor MOSFET 11a 60V 0.107 Ohm Logic Level N-Ch 16 V SMD/SMT TO-252-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 60 V 11 A 77 mOhms   Enhancement  
IRLR120NPBF
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RFQ
1,716
In-stock
Infineon Technologies MOSFET 100V 1 N-CH HEXFET 185mOhms 13.3nC 16 V SMD/SMT TO-252-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 100 V 11 A 265 mOhms 13.3 nC Enhancement  
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