- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
5,402
In-stock
|
Fairchild Semiconductor | MOSFET 150V 14a 0.120 Ohm | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 14 A | 120 mOhms | Enhancement | PowerTrench | ||||||
|
3,560
In-stock
|
IR / Infineon | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | PQFN-8 | - 55C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 14 A | 8.5 mOhms | 4 V | 51 nC | Enhancement | |||||
|
5,000
In-stock
|
Fairchild Semiconductor | MOSFET TO-252 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 50 V | 14 A | 100 mOhms | Enhancement | |||||||
|
2,879
In-stock
|
Fairchild Semiconductor | MOSFET 14A 150V MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 14 A | 90.5 mOhms | 3 V | 11.3 nC | ||||||
|
90,000
In-stock
|
onsemi | MOSFET NFET 25V 73A 0.0062R DPAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 25 V | 14 A | 6.2 mOhms | Enhancement | |||||||
|
541
In-stock
|
onsemi | MOSFET NFET 25V 73A 0.0062R DPAK | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 25 V | 14 A | 6.2 mOhms | Enhancement | |||||||
|
VIEW | STMicroelectronics | MOSFET N-Ch, 120V-0.16ohms 14A | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 120 V | 14 A | 180 mOhms | Enhancement |