- Manufacture :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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558
In-stock
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Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 13mOhms 106.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 82 A | 13 mOhms | 106.7 nC | Enhancement | |||
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490
In-stock
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IR / Infineon | MOSFET 75V 1 N-CH HEXFET 13mOhms 106.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 82 A | 13 mOhms | 4 V | 160 nC | Enhancement | ||
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50
In-stock
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Toshiba | MOSFET N-Ch 40V 4670pF 63.4nC 82A 36W | 20 V | Through Hole | TO-220FP-3 | + 175 C | 1 Channel | Si | N-Channel | 40 V | 82 A | 2.5 mOhms | 1.4 V | 63.4 nC | Enhancement |
