- Manufacture :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
2,560
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 190A 1.95mOhm 57nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 260 A | 1.95 mOhms | 1.9 V | 57 nC | ||||
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GET PRICE |
98
In-stock
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IXYS | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 170 V | 260 A | 5.2 mOhms | 5 V | 640 nC | Enhancement | HiPerFET | ||
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GET PRICE |
737
In-stock
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Infineon Technologies | MOSFET 75V 230A 3 mOhm Automotive MOSFET | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 260 A | 2.5 mOhms | 160 nC | |||||||
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GET PRICE |
50
In-stock
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IXYS | MOSFET TRENCHT2 PWR MOSFET 55V 260A | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 55 V | 260 A | 3.3 mOhms | 4 V | 140 nC | Enhancement | TrenchT2 | |||
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GET PRICE |
37
In-stock
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IXYS | MOSFET 260 Amps 55V | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | Si | N-Channel | 55 V | 260 A | 3.3 mOhms | 4 V | 140 nC | Enhancement | TrenchT2 | |||
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GET PRICE |
1,000
In-stock
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Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 2.6mOhms 160nC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 260 A | 2.1 mOhms | 4 V | 160 nC | ||||
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GET PRICE |
595
In-stock
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IR / Infineon | MOSFET 75V 260A 2.6 mOhm Automotive MOSFET | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 260 A | 2.5 mOhms | 160 nC | |||||||
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GET PRICE |
650
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 3mOhms 75nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 260 A | 3 mOhms | 2.5 V | 75 nC | Enhancement |
