- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
15 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
5,000
In-stock
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Infineon Technologies | MOSFET 150V 1 N-CH HEXFET 56mOhms 60nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 33 A | 56 mOhms | 5.5 V | 60 nC | Enhancement | |||
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GET PRICE |
1,607
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 44mOhms 47.3nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 33 A | 44 mOhms | 4 V | 47.3 nC | Enhancement | |||
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GET PRICE |
9,401
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel QFET | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 33 A | 52 mOhms | Enhancement | |||||
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GET PRICE |
1,049
In-stock
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Fairchild Semiconductor | MOSFET 100V NCh PowerMOSFET UltraFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 33 A | 40 mOhms | Enhancement | |||||
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GET PRICE |
783
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel QFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 33 A | 52 mOhms | Enhancement | QFET | ||||
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GET PRICE |
4,235
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 27A 52mOhm 62.7nCAC | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 33 A | 52 mOhms | 4 V | 94 nC | ||||
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GET PRICE |
4,760
In-stock
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Fairchild Semiconductor | MOSFET 150V N-Channel QFET | 25 V | Through Hole | TO-3PN-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 33 A | 90 mOhms | Enhancement | QFET | ||||
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GET PRICE |
579
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 44mOhms 47.3nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 33 A | 44 mOhms | 2 V to 4 V | 47.3 nC | Enhancement | |||
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GET PRICE |
2,360
In-stock
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onsemi | MOSFET POWER MOSFET 40V | 20 V | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 33 A | 12.7 mOhms | |||||||
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GET PRICE |
6,695
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Ch QFET Logic Level | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 33 A | 52 mOhms | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET AUTO 150V 1 N-CH HEXFET 42mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 33 A | 42 mOhms | 5 V | 26 nC | Enhancement | ||||
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GET PRICE |
256
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 42mOhms 26nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 33 A | 42 mOhms | 3 V to 5 V | 26 nC | Enhancement | |||
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GET PRICE |
3
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 56mOhms 60nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 33 A | 56 mOhms | 60 nC | Enhancement | ||||
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VIEW | IR / Infineon | MOSFET AUTO 150V 1 N-CH HEXFET 42mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 33 A | 42 mOhms | 5 V | 26 nC | Enhancement | ||||
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VIEW | IR / Infineon | MOSFET AUTO 150V 1 N-CH HEXFET 42mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 33 A | 42 mOhms | 5 V | 26 nC | Enhancement |
