- Manufacture :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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VIEW | Siliconix / Vishay | MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | Through Hole | TO-220AB-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 100 A | 0.0072 Ohms | - 2.5 V | 300 nC | Enhancement | |||
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VIEW | Renesas Electronics | MOSFET LOW VOLTAGE POWER MOSFET | +/- 20 V | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 40 V | - 100 A | 3.5 mOhms | Enhancement |
