- Manufacture :
- Package / Case :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
52,500
In-stock
|
STMicroelectronics | MOSFET N-channel 75 V .0095 80A STripFet 2 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 80 A | 11 mOhms | Enhancement | ||||||
|
|
320
In-stock
|
STMicroelectronics | MOSFET N-Ch, 75V-0.0095ohms 80A | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 80 A | 11 mOhms | 3 V | 117 nC | Enhancement | ||||
|
|
VIEW | STMicroelectronics | MOSFET N-CHANNEL CLAMPED 7M OHM - 80A | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 33 V | 80 A | 11 mOhms | Enhancement | |||||||
|
|
1,630
In-stock
|
Infineon Technologies | MOSFET N-Ch 55V 80A TO220-3 OptiMOS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 80 A | 11 mOhms | Enhancement | OptiMOS |