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Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
STP80NF55L-06
1+
$2.720
10+
$2.320
100+
$2.010
250+
$1.910
RFQ
1,281
In-stock
STMicroelectronics MOSFET N-Ch 55 Volt 80 Amp 16 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 55 V 80 A 6.5 mOhms     Enhancement  
IPP80N03S4L-03
1+
$1.300
10+
$1.110
100+
$0.851
500+
$0.752
RFQ
700
In-stock
Infineon Technologies MOSFET N-Ch 30V 80A TO220-3 OptiMOS-T2 16 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 30 V 80 A 2.3 mOhms 1 V 140 nC Enhancement OptiMOS
IPP80N03S4L03AKSA1
1+
$1.300
10+
$1.110
100+
$0.851
500+
$0.752
VIEW
RFQ
Infineon Technologies MOSFET N-Ch 30V 80A TO220-3 OptiMOS-T2 16 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 30 V 80 A 2.3 mOhms 1 V 140 nC Enhancement  
IPP80N06S4L-05
1+
$1.550
10+
$1.240
100+
$0.960
500+
$0.848
RFQ
708
In-stock
Infineon Technologies MOSFET N-Ch 60V 80A TO220-3 OptiMOS-T2 16 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 60 V 80 A 4.8 mOhms 2.2 V 83 nC Enhancement OptiMOS
IPP80N03S4L-04
VIEW
RFQ
Infineon Technologies MOSFET N-Ch 30V 80A TO220-3 OptiMOS-T2 16 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 30 V 80 A 3.6 mOhms     Enhancement OptiMOS
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