- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
3,582
In-stock
|
Fairchild Semiconductor | MOSFET 10a 100V 0.165 Ohm 1Ch HS Logic Gate | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 10 A | 130 mOhms | 3 V | 16 nC | Enhancement | |||
|
|
GET PRICE |
3,864
In-stock
|
STMicroelectronics | MOSFET Automotive-grade N-channel 30 V, 25 mOhm typ, 10 A STripFE... | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 33 mOhms | 1 V | 3.7 nC | Enhancement | |||
|
|
GET PRICE |
2,025
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-Channel QFET Logic Level | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 10 A | 88 mOhms | Enhancement | QFET | ||||
|
|
GET PRICE |
1,539
In-stock
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 180mOhms 13.3nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 10 A | 180 mOhms | 13.3 nC | Enhancement | ||||
|
|
GET PRICE |
1,013
In-stock
|
IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 140mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 10 A | 140 mOhms | 1 V | 7.9 nC | ||||
|
|
GET PRICE |
12,500
In-stock
|
Vishay Semiconductors | MOSFET N Ch 300Vds 30Vgs AEC-Q101 Qualified | +/- 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 300 V | 10 A | 0.275 Ohms | 3.4 V | 47 nC | Enhancement | |||
|
|
VIEW | IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 140mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 10 A | 140 mOhms | 1 V | 7.9 nC |
