- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,958
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 90 A | 4.4 mOhms | 2 V | 69 nC | Enhancement | |||
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1,000
In-stock
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STMicroelectronics | MOSFET N-chanl 80 V 33 mOhm typ 90 A Pwr MOSFET | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 90 A | 4 mOhms | 4.5 V | 96 nC | Enhancement | |||
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2,473
In-stock
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Fairchild Semiconductor | MOSFET 80V 90A Dual DPAK N-Chnl PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 80 V | 90 A | 17.4 mOhms | 2 V | 34 nC | Enhancement | |||
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996
In-stock
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STMicroelectronics | MOSFET Automotive-grade N-channel 80 V, 3.3 mOhm typ., 90 A STripF... | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 90 A | 3.3 mOhms | 2.5 V | 96 nC | Enhancement | |||
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VIEW | Infineon Technologies | MOSFET N-CHANNEL 75/80V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 90 A | 4.5 mOhms | 2 V | 68 nC | Enhancement | |||
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VIEW | Infineon Technologies | MOSFET N-CHANNEL 75/80V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 90 A | 4.5 mOhms | 2 V | 68 nC | Enhancement |
