- Manufacture :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
2 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2,956
In-stock
|
IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 320 A | 1.2 mOhms | 2 V | 260 nC | Enhancement | ||||
|
175
In-stock
|
Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 1.6mOhms 170nC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 320 A | 1.6 mOhms | 170 nC | Enhancement |