MOSFET - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	FDD8882	1+ $0.880 10+ $0.731 100+ $0.472 1000+ $0.377 2500+ $0.319		PDF RFQ	10,000 In-stock	Fairchild Semiconductor	MOSFET 30V N-Channel PowerTrench MOSFET	20 V	SMD/SMT	TO-252-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	30 V	55 A	11.5 mOhms			Enhancement	PowerTrench
	DMNH10H028SK3Q-13	1+ $1.650 10+ $1.400 100+ $1.120 500+ $0.981 2500+ $0.757		PDF RFQ	2,473 In-stock	Diodes Incorporated	MOSFET 100V 175c N-Ch FET 28mOhm 10V 55A	20 V	SMD/SMT	TO-252-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	100 V	55 A	28 mOhms	2 V	36 nC	Enhancement
	TK55S10N1,LQ	1+ $2.700 10+ $2.170 100+ $1.740 250+ $1.650 2000+ $1.170		PDF RFQ	5,999 In-stock	Toshiba	MOSFET UMOSVIII 100V 6.5m max(VGS=10V) DPAK	20 V	SMD/SMT	TO-252-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	100 V	55 A	5.5 mOhms	4 V	49 nC	Enhancement

FDD8882

FDD8882

Fairchild Semiconductor

MOSFET 30V N-Channel PowerTrench MOSFET

Stock : 10,000

1+: $0.880

10+: $0.731

100+: $0.472

1000+: $0.377

2500+: $0.319

DMNH10H028SK3Q-13

DMNH10H028SK3Q-13

Diodes Incorporated

MOSFET 100V 175c N-Ch FET 28mOhm 10V 55A

Stock : 2,473

1+: $1.650

10+: $1.400

100+: $1.120

500+: $0.981

2500+: $0.757

TK55S10N1,LQ

TK55S10N1,LQ

Toshiba

MOSFET UMOSVIII 100V 6.5m max(VGS=10V) DPAK

Stock : 5,999

1+: $2.700

10+: $2.170

100+: $1.740

250+: $1.650

2000+: $1.170

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