- Package / Case :
- Transistor Polarity :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
20 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,700
In-stock
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onsemi | MOSFET 60V T1 PCH DPAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 61 A | 16 mOhms | 85 nC | |||||||
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1,319
In-stock
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Infineon Technologies | MOSFET 100V HEXFET 14mOhms 15nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 63 A | 16 mOhms | 2.5 V | 34 nC | Enhancement | |||||
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1,771
In-stock
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Fairchild Semiconductor | MOSFET 75V 50a .16Ohms/VGS=1V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 50 A | 16 mOhms | Enhancement | PowerTrench | ||||||
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696
In-stock
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Fairchild Semiconductor | MOSFET N-Ch PowerTrench Trench Mos. | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 61 A | 16 mOhms | Enhancement | PowerTrench | ||||||
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304
In-stock
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IXYS | MOSFET POLAR HT MOSFET 150V 120A | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 120 A | 16 mOhms | 5 V | 150 nC | Enhancement | PolarHT | ||||
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2,454
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 12mOhms 22nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 64 A | 16 mOhms | 22 nC | Enhancement | ||||||
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754
In-stock
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Fairchild Semiconductor | MOSFET Trans N-Ch 75V 9A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 50 A | 16 mOhms | Enhancement | |||||||
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46,200
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 50 A | 16 mOhms | 2 V | 31 nC | Enhancement | |||||
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367
In-stock
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STMicroelectronics | MOSFET N-Ch 60 Volt 35 Amp | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 35 A | 16 mOhms | Enhancement | |||||||
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985
In-stock
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onsemi | MOSFET NFET 60V 34A 18MOHM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 46 A | 16 mOhms | 2 V | 29 nC | ||||||
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1,400
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 16mOhms 70nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 56 A | 16 mOhms | 70 nC | Enhancement | ||||||
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319
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 70A D2PAK-2 SIPMOS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 70 A | 16 mOhms | Enhancement | SIPMOS | ||||||
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4,000
In-stock
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Infineon Technologies | MOSFET 55V N-CH HEXFET 16mOhms 70nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 56 A | 16 mOhms | 70 nC | Enhancement | ||||||
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VIEW | IXYS | MOSFET 120 Amps 150V 0.016 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 120 A | 16 mOhms | Enhancement | HyperFET | ||||||
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VIEW | Infineon Technologies | MOSFET AUTO 75V 1 N-CH HEXFET 16mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 3.1 A | 16 mOhms | Enhancement | |||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 30V 14m 35A 16mOhm STripFET V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 35 A | 16 mOhms | 5.4 nC | Enhancement | ||||||
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1,190
In-stock
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IR / Infineon | MOSFET 75V 1 N-CH HEXFET 16mOhms 50nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 53 A | 16 mOhms | 2 V to 4 V | 50 nC | Enhancement | |||||
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60,000
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 50A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 50 A | 16 mOhms | 2 V | 31 nC | Enhancement | OptiMOS | ||||
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VIEW | IR / Infineon | MOSFET AUTO 75V 1 N-CH HEXFET 16mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 3.1 A | 16 mOhms | Enhancement | |||||||
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VIEW | IR / Infineon | MOSFET AUTO 75V 1 N-CH HEXFET 16mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 3.1 A | 16 mOhms | Enhancement |