- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Qg - Gate Charge :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,029
In-stock
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Fairchild Semiconductor | MOSFET SO-8 | - 20 V, + 30 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 12.5 A | 9 mOhms | Enhancement | PowerTrench | |||||
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2,443
In-stock
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IR / Infineon | MOSFET MOSFT 40V 77A 9mOhm 30nC Qg | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 77 A | 9 mOhms | 4 V | 45 nC | |||||||
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2,615
In-stock
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IR / Infineon | MOSFET 40V 1 N-CH HEXFET 2.2mOhms 43nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 9 mOhms | 62 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 9mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 3.1 A | 9 mOhms | Enhancement | ||||||
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38
In-stock
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IR / Infineon | MOSFET 40V 1 N-CH HEXFET 6.5mOhms 66.7nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 110 A | 9 mOhms | 1 V | 66.7 nC | Enhancement | ||||
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29
In-stock
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IR / Infineon | MOSFET 40V 1 N-CH HEXFET PWR MOSFET 6.5mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 130 A | 9 mOhms | 1 V | 100 nC | Enhancement | ||||
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VIEW | IR / Infineon | MOSFET 40V 1 N-CH HEXFET 9mOhms 30nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 77 A | 9 mOhms | 4 V | 30 nC | Enhancement | ||||
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VIEW | IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 9mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 3.1 A | 9 mOhms | Enhancement |
