- Mounting Style :
- Minimum Operating Temperature :
- Qg - Gate Charge :
26 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,290
In-stock
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Fairchild Semiconductor | MOSFET N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 80 A | 9 mOhms | 2 V | 57 nC | Enhancement | PowerTrench | |||
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671
In-stock
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IXYS | MOSFET 170 Amps 100V 0.009 Ohm Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 170 A | 9 mOhms | Enhancement | ||||||
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2,633
In-stock
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Infineon Technologies | MOSFET 100V 97A 9mOhm Automotive MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 97 A | 9 mOhms | 2 V to 4 V | 83 nC | Enhancement | ||||
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2,615
In-stock
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IR / Infineon | MOSFET 40V 1 N-CH HEXFET 2.2mOhms 43nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 9 mOhms | 62 nC | Enhancement | |||||
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8,520
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 110 A | 9 mOhms | Enhancement | ||||||
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3,854
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 58 A | 9 mOhms | Enhancement | PowerTrench | |||||
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786
In-stock
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Fairchild Semiconductor | MOSFET 100V 75A N-Chan PowerTrench | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 9 mOhms | Enhancement | PowerTrench | |||||
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105
In-stock
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IXYS | MOSFET 133 Amps 100V 0.0075 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 133 A | 9 mOhms | 5 V | 235 nC | Enhancement | Polar, HiPerFET | |||
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1,320
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 9 mOhms | Enhancement | OptiMOS | |||||
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82
In-stock
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IXYS | MOSFET PolarHT HiperFET 100v, 170A | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 170 A | 9 mOhms | 5 V | 198 nC | Enhancement | PolarHT, HiPerFET | |||
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118
In-stock
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IXYS | MOSFET Trench T2 HiperFET Power MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 160 A | 9 mOhms | 4.5 V | 253 nC | Enhancement | TrenchT2, HiperFET | |||
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2,395
In-stock
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onsemi | MOSFET NFET 30V 58A 9MOHM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 11.5 A | 9 mOhms | Enhancement | ||||||
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15
In-stock
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IXYS | MOSFET 220Amps 150V | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 220 A | 9 mOhms | 4.5 V | 162 nC | Enhancement | Polar, HiPerFET | |||
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36
In-stock
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Fairchild Semiconductor | MOSFET N-Ch PowerTrench Logic Level | 20 V | SMD/SMT | TO-263-3 | - 65 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 60 A | 9 mOhms | Enhancement | PowerTrench | |||||
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15,591
In-stock
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Fairchild Semiconductor | MOSFET N-Ch PowerTrench Logic Level | 20 V | Through Hole | TO-220-3 | - 65 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 60 A | 9 mOhms | Enhancement | PowerTrench | |||||
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4,000
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 67 A | 9 mOhms | 97 nC | Enhancement | Directfet | ||||
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823
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 50A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 50 A | 9 mOhms | 4 V | 36 nC | Enhancement | OptiMOS | |||
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30
In-stock
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IXYS | MOSFET 170 Amps 100V 0.009 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 170 A | 9 mOhms | 5 V | 198 nC | Enhancement | PolarHT, HiPerFET | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 30V 40A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 9 mOhms | Enhancement | OptiMOS | |||||
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VIEW | IXYS | MOSFET 170 Amps 100V 0.009 Ohm Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 170 A | 9 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 170 Amps 100V 0.009 Ohm Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 170 A | 9 mOhms | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 9mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 3.1 A | 9 mOhms | Enhancement | ||||||
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25,000
In-stock
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STMicroelectronics | MOSFET N-Ch 30 Volt 40 Amp | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 9 mOhms | Enhancement | ||||||
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670
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 40A IPAK-3 OptiMOS 3 | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 40 A | 9 mOhms | Enhancement | OptiMOS | |||||
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VIEW | IR / Infineon | MOSFET 40V 1 N-CH HEXFET 9mOhms 30nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 77 A | 9 mOhms | 4 V | 30 nC | Enhancement | ||||
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VIEW | IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 9mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 3.1 A | 9 mOhms | Enhancement |
