- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Transistor Polarity :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
16 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
5,606
In-stock
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Fairchild Semiconductor | MOSFET 25V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 25 V | 35 A | 8.5 mOhms | Enhancement | PowerTrench | ||||
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GET PRICE |
7,379
In-stock
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Fairchild Semiconductor | MOSFET SO-8 | 8 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 13.5 A | 8.5 mOhms | Enhancement | PowerTrench | ||||
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GET PRICE |
3,823
In-stock
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IR / Infineon | MOSFET MOSFT 60V 84A 8.5mOhm 58nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 75 A | 8.5 mOhms | 58 nC | Enhancement | ||||
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GET PRICE |
45,200
In-stock
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STMicroelectronics | MOSFET N Ch 55V 6.5mohm 80A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 80 A | 8.5 mOhms | Enhancement | |||||
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GET PRICE |
2,903
In-stock
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STMicroelectronics | MOSFET STripFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 80 A | 8.5 mOhms | 4 V | 33.5 nC | Enhancement | |||
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GET PRICE |
3,560
In-stock
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IR / Infineon | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | PQFN-8 | - 55C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 14 A | 8.5 mOhms | 4 V | 51 nC | Enhancement | |||
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GET PRICE |
800
In-stock
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Infineon Technologies | MOSFET AUTO 60V 1 N-CH HEXFET 8.5mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 44 A | 8.5 mOhms | Enhancement | |||||
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GET PRICE |
2,000
In-stock
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Infineon Technologies | MOSFET 60V StrongIRFET Power Mosfet | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 71 A | 8.5 mOhms | 3.7 V | 58 nC | StrongIRFET | |||
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GET PRICE |
2,920
In-stock
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Infineon Technologies | MOSFET 12V 1 N-CH HEXFET 4.2mOhms 27nC | 12 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 12 V | 84 A | 8.5 mOhms | 1.9 V | 27 nC | Enhancement | |||
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VIEW | IXYS | MOSFET MOSFET Id130 BVdass100 | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 130 A | 8.5 mOhms | Enhancement | |||||||
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VIEW | IR / Infineon | MOSFET 12V 1 N-CH HEXFET 4.2mOhms 27nC | 12 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 12 V | 84 A | 8.5 mOhms | 1.9 V | 27 nC | Enhancement | ||||
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GET PRICE |
5
In-stock
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IXYS | MOSFET 130 Amps 100V 8.5 Rds | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 130 A | 8.5 mOhms | Enhancement | ||||||
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GET PRICE |
3,200
In-stock
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IXYS | MOSFET 130 Amps 100V 8.5 Rds | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 130 A | 8.5 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 130 Amps 100V 8.5 Rds | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 130 A | 8.5 mOhms | Enhancement | |||||||
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GET PRICE |
14
In-stock
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IR / Infineon | MOSFET 60V 1 N-CH HEXFET 8.5mOhms 58nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 84 A | 8.5 mOhms | 2 V to 4 V | 58 nC | Enhancement | |||
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VIEW | IR / Infineon | MOSFET AUTO 60V 1 N-CH HEXFET 8.5mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 44 A | 8.5 mOhms | Enhancement |
