- Manufacture :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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GET PRICE |
2,476
In-stock
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onsemi | MOSFET NFET DPAK 100V 23A 56MOHM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 25 A | 43 mOhms | 1 V | 35 nC | Enhancement | ||
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GET PRICE |
1,180
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 37mOhms 13.3nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 25 A | 43 mOhms | 1 V to 3 V | 13.3 nC | Enhancement | ||
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VIEW | Infineon Technologies | MOSFET 55V 25A 43 mOhm Auto Logic Level MOSFET | 16 V | SMD/SMT | TO-252-3 | + 175 C | Reel | Si | N-Channel | 55 V | 25 A | 43 mOhms | 13.3 nC | |||||||
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GET PRICE |
16
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 37mOhms 13.3nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 25 A | 43 mOhms | 1 V to 3 V | 13.3 nC | Enhancement | ||
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VIEW | IR / Infineon | MOSFET 55V 25A 43 mOhm Auto Logic Level MOSFET | 16 V | SMD/SMT | TO-252-3 | + 175 C | Reel | Si | N-Channel | 55 V | 25 A | 43 mOhms | 13.3 nC |
