6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | Tradename | |
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2,991
In-stock
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STMicroelectronics | MOSFET N-channel MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 60 A | 14 mOhms | Enhancement | ||||
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1,270
In-stock
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Fairchild Semiconductor | MOSFET N-Ch Power MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 70 A | 14 mOhms | Enhancement | ||||
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918
In-stock
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Fairchild Semiconductor | MOSFET 75a 100V N-Ch UltraFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 14 mOhms | Enhancement | UltraFET | |||
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535
In-stock
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Fairchild Semiconductor | MOSFET 75a 80V N-Ch UltraFET 0.014 Ohm | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 75 A | 14 mOhms | Enhancement | UltraFET | |||
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GET PRICE |
17,300
In-stock
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IXYS | MOSFET 80 Amps 100V 13.0 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 80 A | 14 mOhms | Enhancement | |||
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167
In-stock
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Fairchild Semiconductor | MOSFET 100V 61a 0.016 Ohm | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 61 A | 14 mOhms | Enhancement |
