Build a global manufacturer and supplier trusted trading platform.
Package / Case :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IRFP7718PBF
1+
$5.630
10+
$4.780
25+
$4.700
100+
$4.150
RFQ
256
In-stock
Infineon Technologies MOSFET 75V Single N-Channel HEXFET Power 20 V Through Hole TO-247-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 75 V 195 A 1.8 mOhms 3.7 V 830 nC Enhancement StrongIRFET
IRFSL7437PBF
1+
$1.820
10+
$1.550
100+
$1.240
500+
$1.080
RFQ
100
In-stock
IR / Infineon MOSFET 40V, 195A, 1.8 mOhm 150 nC Qg, TO-262   Through Hole TO-262-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 40 V 250 A 1.8 mOhms 3.9 V 225 nC Enhancement StrongIRFET
Page 1 / 1