- Mounting Style :
- Package / Case :
- Qg - Gate Charge :
- Tradename :
13 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
2,468
In-stock
|
Fairchild Semiconductor | MOSFET LOW VOLTAGE | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 145 A | 5.2 mOhms | Enhancement | PowerTrench | ||||
|
|
GET PRICE |
3,738
In-stock
|
IR / Infineon | MOSFET 40V 1 N-CH HEXFET 4.5mOhms 40nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 130 A | 5.2 mOhms | 2.5 V | 40 nC | Enhancement | |||
|
|
GET PRICE |
98
In-stock
|
IXYS | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 170 V | 260 A | 5.2 mOhms | 5 V | 640 nC | Enhancement | HiPerFET | ||
|
|
GET PRICE |
517
In-stock
|
Infineon Technologies | MOSFET N-Ch 150V 130A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 130 A | 5.2 mOhms | 2 V | 93 nC | Enhancement | OptiMOS | ||
|
|
GET PRICE |
1,660
In-stock
|
Fairchild Semiconductor | MOSFET LOW VOLTAGE | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 145 A | 5.2 mOhms | Enhancement | PowerTrench | ||||
|
|
GET PRICE |
908
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 45A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 45 A | 5.2 mOhms | 2.1 V | 32 nC | Enhancement | |||
|
|
GET PRICE |
752
In-stock
|
Infineon Technologies | MOSFET N-Ch 75V 80A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 80 A | 5.2 mOhms | 3.1 V | 51 nC | OptiMOS | |||
|
|
GET PRICE |
498
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 80A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 80 A | 5.2 mOhms | Enhancement | |||||
|
|
GET PRICE |
8
In-stock
|
IXYS | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | Si | N-Channel | 150 V | 240 A | 5.2 mOhms | 460 nC | Enhancement | HiPerFET | ||||
|
|
GET PRICE |
87
In-stock
|
STMicroelectronics | MOSFET N-Ch 55V 4.3mOhm 55V STripFET VI | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 55 V | 110 A | 5.2 mOhms | 120 nC | |||||||
|
|
GET PRICE |
564
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 45A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 45 A | 5.2 mOhms | 2.1 V | 32 nC | Enhancement | OptiMOS | ||
|
|
VIEW | Infineon Technologies | MOSFET N-Ch 150V 130A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 130 A | 5.2 mOhms | 2 V | 93 nC | Enhancement | OptiMOS | |||
|
|
GET PRICE |
870
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 70A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | GaN | N-Channel | 40 V | 70 A | 5.2 mOhms | Enhancement |
