- Mounting Style :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Tradename :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,612
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 13 A | 78 mOhms | 3 V | 8 nC | Enhancement | |||
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1,636
In-stock
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Fairchild Semiconductor | MOSFET Single P-Ch MOSFET Power Trench | 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 3 A | 78 mOhms | Enhancement | PowerTrench | ||||
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29
In-stock
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IXYS | MOSFET 32 Amps 200V 78 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 32 A | 78 mOhms | 5 V | 38 nC | Enhancement | Trench | ||
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VIEW | IXYS | MOSFET 32 Amps 200V 78 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 32 A | 78 mOhms | Enhancement | ||||||
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5
In-stock
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IR / Infineon | MOSFET MOSFT 200V 24A 78mOhm 25nC | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 24 A | 78 mOhms | 25 nC | Enhancement |
