- Qg - Gate Charge :
- Tradename :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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948
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 80 A | 5 mOhms | 2 V | 189 nC | Enhancement | ||||
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409
In-stock
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Fairchild Semiconductor | MOSFET N-Channel PowerTrench | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 80 A | 5 mOhms | Enhancement | PowerTrench | |||||
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602
In-stock
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Infineon Technologies | MOSFET N-Ch 75V 100A TO220-3 OptiMOS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 100 A | 5 mOhms | 1.2 V | 246 nC | Enhancement | OptiMOS | |||
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174
In-stock
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IR / Infineon | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 122 A | 5 mOhms | 2 V | 110 nC | Enhancement | ||||
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2,000
In-stock
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STMicroelectronics | MOSFET N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power M... | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 80 A | 5 mOhms | 2 V | 42 nC | Enhancement | STripFET | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 75V 100A TO220-3 OptiMOS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 100 A | 5 mOhms | 1.2 V | 246 nC | Enhancement |
