Build a global manufacturer and supplier trusted trading platform.
Vgs - Gate-Source Voltage :
Package / Case :
Packaging :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPD60N10S4L-12
GET PRICE
RFQ
20,000
In-stock
Infineon Technologies MOSFET N-Ch 100V 60A DPAK-2 16 V SMD/SMT TO-252-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 100 V 60 A 9.8 mOhms 1.1 V 49 nC Enhancement  
IPD60N10S4L12ATMA1
GET PRICE
RFQ
2,500
In-stock
Infineon Technologies MOSFET N-Ch 100V 60A DPAK-2 16 V SMD/SMT TO-252-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 100 V 60 A 9.8 mOhms 1.1 V 49 nC Enhancement  
STP80NF70
GET PRICE
RFQ
537
In-stock
STMicroelectronics MOSFET N-Ch 68V 0.0082 Ohm 98 A STripFET II 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 68 V 98 A 9.8 mOhms 4 V 75 nC Enhancement  
IPP77N06S2-12
GET PRICE
RFQ
58
In-stock
Infineon Technologies MOSFET N-Ch 55V 77A TO220-3 OptiMOS 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 55 V 77 A 9.8 mOhms 2.1 V 60 nC Enhancement OptiMOS
Page 1 / 1