- Package / Case :
- Tradename :
15 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
2,942
In-stock
|
Fairchild Semiconductor | MOSFET SO-8 | 8 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 20 V | 16 A | 6 mOhms | Enhancement | PowerTrench | |||||
|
|
647
In-stock
|
Fairchild Semiconductor | MOSFET 75a 55V 0.007Ohm NCh UltraFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 75 A | 6 mOhms | Enhancement | ||||||
|
|
1,634
In-stock
|
STMicroelectronics | MOSFET N-Ch 40V 80A STripFET VI DeepGate | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 6 mOhms | 4 V | 36 nC | ||||||
|
|
3,200
In-stock
|
STMicroelectronics | MOSFET N-Ch 30V 0.0061Ohm 65A pwr STripFET V | 22 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 65 A | 6 mOhms | 1.8 V | 8 nC | |||||
|
|
616
In-stock
|
STMicroelectronics | MOSFET N-Ch 55 Volt 120 Amp | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 120 A | 6 mOhms | Enhancement | ||||||
|
|
1,590
In-stock
|
STMicroelectronics | MOSFET Automotive-grade N-channel 40 V, 5.5 mOhm typ., 80 A, STripF... | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 6 mOhms | 2 V | 36 nC | Enhancement | ||||
|
|
2,158
In-stock
|
onsemi | MOSFET T6 40V NCH LL IN SO8 | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 87 A | 6 mOhms | 1.2 V | 18 nC | Enhancement | ||||
|
|
615
In-stock
|
Fairchild Semiconductor | MOSFET MV7 60/20V 1000A N-channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 6 mOhms | 2 V | 63 nC | Enhancement | ||||
|
|
1,425
In-stock
|
onsemi | MOSFET T6 40V NCH LL IN U8FL | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 85 A | 6 mOhms | 1.2 V | 18 nC | Enhancement | ||||
|
|
14,788
In-stock
|
Toshiba | MOSFET 40 Volt N-Channel | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 6 mOhms | 1.4 V | 27 nC | Enhancement | ||||
|
|
9,600
In-stock
|
Toshiba | MOSFET 40 Volt N-Channel | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 92 A | 6 mOhms | 1.4 V | 27 nC | Enhancement | ||||
|
|
VIEW | Infineon Technologies | MOSFET N-Ch 40V 80A DPAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 6 mOhms | Enhancement | OptiMOS | |||||
|
|
VIEW | Infineon Technologies | MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 6 mOhms | Enhancement | OptiMOS | |||||
|
|
7,500
In-stock
|
Diodes Incorporated | MOSFET 40V N-Ch Enh Mode AEC-Q101 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 140 A | 6 mOhms | 2 V | 51 nC | Enhancement | ||||
|
|
291
In-stock
|
IR / Infineon | MOSFET MOSFT 30V 105A 6mOhm 23nC Qg log lvl | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 105 A | 6 mOhms | 2.25 V | 35 nC |
