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Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPB065N03L G
1+
$0.860
10+
$0.730
100+
$0.561
500+
$0.496
1000+
$0.391
RFQ
4,441
In-stock
Infineon Technologies MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 20 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 30 V 50 A 5.4 mOhms 1 V 11 nC Enhancement OptiMOS
IPB065N03LGATMA1
1+
$0.860
10+
$0.730
100+
$0.561
500+
$0.496
1000+
$0.391
RFQ
892
In-stock
Infineon Technologies MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 20 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 30 V 50 A 5.4 mOhms 1 V 11 nC Enhancement OptiMOS
TPH7R204PL,LQ
1+
$0.800
10+
$0.626
100+
$0.404
1000+
$0.323
3000+
$0.263
RFQ
6,000
In-stock
Toshiba MOSFET N-Ch 40V 1570pF 24.4nC 50A 36W 20 V SMD/SMT SOP-Advance-8   + 175 C Reel 1 Channel Si N-Channel 40 V 72 A 5.4 mOhms 1.4 V 24 nC Enhancement  
TPH7R006PL,L1Q
1+
$1.200
10+
$0.966
100+
$0.742
500+
$0.656
5000+
$0.449
RFQ
4,984
In-stock
Toshiba MOSFET N-Ch 60V 1440pF 27nC 79A 81W 20 V SMD/SMT SOP-Advance-8   + 175 C Reel 1 Channel Si N-Channel 60 V 79 A 5.4 mOhms 1.5 V 22 nC Enhancement  
IPB80N06S4-05
GET PRICE
RFQ
8,490
In-stock
Infineon Technologies MOSFET N-Ch 60V 80A D2PAK-2 OptiMOS-T2 20 V SMD/SMT TO-263-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 60 V 80 A 5.4 mOhms     Enhancement OptiMOS
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