- Mounting Style :
- Package / Case :
- Qg - Gate Charge :
- Tradename :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
290
In-stock
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IR / Infineon | MOSFET MOSFET, 40V, 195A, 1 216 nC Qg, TO-220AB | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 317 A | 1.25 mOhms | 2.2 V | 324 nC | Enhancement | StrongIRFET | ||
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GET PRICE |
20
In-stock
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IXYS | MOSFET 40V/440A TrenchT4 Power MOSFET | 15 V | SMD/SMT | TO-268-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 440 A | 1.25 mOhms | 2 V | 480 nC | Enhancement | TrenchT4 | ||
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VIEW | Infineon Technologies | MOSFET Auto 40V Sngl N-Ch HEXFET PowerMOSFET | 20 V | SMD/SMT | TO-263-7 | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 400 A | 1.25 mOhms | 160 nC | |||||||
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GET PRICE |
3,500
In-stock
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STMicroelectronics | MOSFET N-channel 40 V 180 A STripFET Pwr MOSFET | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 1.25 mOhms | 3 V | 340 nC | Enhancement |
