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Package / Case :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
SQ3456BEV-T1_GE3
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RFQ
21,000
In-stock
Vishay Semiconductors MOSFET 30V 7.8A 4W AEC-Q101 Qualified +/- 20 V SMD/SMT TSOP-6 - 55 C + 175 C Reel 1 Channel Si N-Channel 30 V 7.8 A 0.028 Ohms 1.5 V 10 nC Enhancement TrenchFET
SQM60N20-35_GE3
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RFQ
542
In-stock
Siliconix / Vishay MOSFET N-Channel 200V AEC-Q101 Qualified +/- 20 V SMD/SMT TO-263-3 - 55 C + 175 C   1 Channel Si N-Channel 200 V 60 A 0.028 Ohms 2.5 V 135 nC Enhancement TrenchFET
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