- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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onsemi | MOSFET PCH 4V DRIVE SERIES | +/- 20 V | SMD/SMT | ATPAK-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 27 A | 33 mOhms | - 2.6 V | 33.5 nC | Enhancement | ||
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VIEW | onsemi | MOSFET Power MOSFET P-Chann -30 V | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 27 A | 23 mOhms | - 2.6 V | 18.5 nC | Enhancement | |||
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VIEW | onsemi | MOSFET Power MOSFET P-Channel -30 V | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 44 A | 14 mOhms | - 2.6 V | 34 nC | Enhancement | |||
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VIEW | onsemi | MOSFET Power MOSFET P-Channel -30 V | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 60 A | 10 mOhms | - 2.6 V | 47 nC | Enhancement | |||
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VIEW | onsemi | MOSFET Power MOSFET P-Channel -30 V | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 82 A | 6.4 mOhms | - 2.6 V | 76 nC | Enhancement |
