- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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4,918
In-stock
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Toshiba | MOSFET N-Ch 30V 5800pF 81nC 280A 132W | 20 V | SMD/SMT | SOP-Advance-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 280 A | 610 uOhms | 1.1 V | Enhancement | |||||
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3,000
In-stock
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Toshiba | MOSFET N-Ch 30V 2940pF 50nC 134A 90W | 20 V | SMD/SMT | SOP-Advance-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 134 A | 2.2 mOhms | 1.1 V | 50 nC | Enhancement | ||||
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333
In-stock
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Toshiba | MOSFET N-Ch 30V 2970pF 41nC 33A 30W | 20 V | SMD/SMT | TSON-Advance-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 188 A | 1.2 mOhms | 1.1 V | 41 nC | Enhancement | ||||
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8,688
In-stock
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Toshiba | MOSFET 30 Volt N-Channel | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 150 A | 890 mOhms | 1.1 V | 110 nC | Enhancement |
