- Manufacture :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Rds On - Drain-Source Resistance :
27 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,990
In-stock
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Vishay Semiconductors | MOSFET 100V 32A 83W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 32 A | 0.021 Ohms | 2.5 V | 63 nC | Enhancement | TrenchFET | ||||
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1,973
In-stock
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Vishay Semiconductors | MOSFET 150V 25A 136W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 25 A | 0.038 Ohms | 2.5 V | 51 nC | Enhancement | TrenchFET | ||||
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3,742
In-stock
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Siliconix / Vishay | MOSFET N-Channel 40V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 0.0046 Ohms | 2.5 V | 85 nC | Enhancement | TrenchFET | ||||
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2,467
In-stock
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Vishay Semiconductors | MOSFET 40V 50A 71W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 0.0046 Ohms | 2.5 V | 85 nC | Enhancement | TrenchFET | ||||
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733
In-stock
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Vishay Semiconductors | MOSFET N-Channel 100V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 0.003 Ohms | 2.5 V | 190 nC | Enhancement | TrenchFET | ||||
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770
In-stock
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Siliconix / Vishay | MOSFET N-Chnl 40-V (D-S) AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 40 V | 200 A | 0.0015 Ohms | 2.5 V | 310 nC | Enhancement | TrenchFET | |||||
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1,906
In-stock
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Vishay Semiconductors | MOSFET N-Channel 40V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 0.003 Ohms | 2.5 V | 105 nC | Enhancement | TrenchFET | ||||
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891
In-stock
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Siliconix / Vishay | MOSFET N-Channel 250V AEC-Q101 Qualified | +/- 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 7 A | 0.29 Ohms | 2.5 V | 29 nC | Enhancement | TrenchFET | ||||
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542
In-stock
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Siliconix / Vishay | MOSFET N-Channel 200V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 200 V | 60 A | 0.028 Ohms | 2.5 V | 135 nC | Enhancement | TrenchFET | |||||
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620
In-stock
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Vishay Semiconductors | MOSFET 100V 40A 107W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 0.023 Ohms | 2.5 V | 62 nC | Enhancement | TrenchFET | ||||
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GET PRICE |
800
In-stock
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Vishay Semiconductors | MOSFET 40V 100A 157W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 0.00225 Ohms | 2.5 V | 145 nC | Enhancement | TrenchFET | |||
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481
In-stock
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Siliconix / Vishay | MOSFET N-Channel 100V AEC-Q101 Qualified | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 100 V | 120 A | 0.003 Ohms | 2.5 V | 190 nC | Enhancement | TrenchFET | |||||
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355
In-stock
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Siliconix / Vishay | MOSFET N-Chnl 60-V (D-S) AEC-Q101 Qualified | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 60 V | 56 A | 0.012 Ohms | 2.5 V | 50 nC | Enhancement | TrenchFET | |||||
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790
In-stock
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Siliconix / Vishay | MOSFET N-Channel 100V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 0.0079 Ohms | 2.5 V | 180 nC | Enhancement | TrenchFET | ||||
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VIEW | Siliconix / Vishay | MOSFET N-Chnl 100-V (D-S) AEC-Q101 Qualified | +/- 20 V | Through Hole | TO-220AB-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 100 V | 120 A | 0.0079 Ohms | 2.5 V | 180 nC | Enhancement | TrenchFET | |||||
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673
In-stock
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Vishay Semiconductors | MOSFET 60V 60A 100W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 56 A | 0.012 Ohms | 2.5 V | 50 nC | Enhancement | TrenchFET | ||||
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725
In-stock
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Vishay Semiconductors | MOSFET 150V 40A 166W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 40 A | 0.027 Ohms | 2.5 V | 70 nC | Enhancement | TrenchFET | ||||
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739
In-stock
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Vishay Semiconductors | MOSFET 40V 120A 300W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 0.0015 Ohms | 2.5 V | 270 nC | Enhancement | TrenchFET | ||||
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VIEW | Siliconix / Vishay | MOSFET N-Channel 40V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-Reverse-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 0.003 Ohms | 2.5 V | 105 nC | Enhancement | TrenchFET | ||||
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VIEW | Vishay Semiconductors | MOSFET 150V 85A 375W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 85 A | 0.016 Ohms | 2.5 V | 120 nC | Enhancement | TrenchFET | ||||
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VIEW | Vishay Semiconductors | MOSFET 40V 50A 150W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 0.003 Ohms | 2.5 V | 105 nC | Enhancement | TrenchFET | ||||
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VIEW | Vishay Semiconductors | MOSFET 40V 120A 375W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 0.0014 Ohms | 2.5 V | 310 nC | Enhancement | TrenchFET | ||||
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VIEW | Siliconix / Vishay | MOSFET N-Chnl 300-V (D-S) AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 300 V | 35 A | 0.078 Ohms | 2.5 V | 130 nC | Enhancement | TrenchFET | |||||
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VIEW | Vishay Semiconductors | MOSFET 60V 16A 7.1W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 16 A | 0.01 Ohms | 2.5 V | 68 nC | Enhancement | TrenchFET | ||||
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VIEW | Siliconix / Vishay | MOSFET N-Chnl 150-V (D-S) AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 150 V | 25 A | 0.041 Ohms | 2.5 V | 51 nC | Enhancement | TrenchFET | |||||
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VIEW | Siliconix / Vishay | MOSFET N-Chnl 100-V (D-S) AEC-Q101 Qualified | +/- 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 100 V | 120 A | 0.003 Ohms | 2.5 V | 190 nC | Enhancement | TrenchFET | |||||
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VIEW | Vishay Semiconductors | MOSFET 30V 100A 136W N-Channel MOSFET | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 0.0028 Ohms | 2.5 V | 124 nC | Enhancement | TrenchFET |