- Manufacture :
- Mounting Style :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
-
- 1.5 mOhms (1)
- 10 mOhms (1)
- 11 mOhms (6)
- 13 mOhms (4)
- 14 mOhms (3)
- 15 mOhms (2)
- 16 mOhms (2)
- 18 mOhms (1)
- 2.2 mOhms (2)
- 2.6 mOhms (2)
- 22 mOhms (5)
- 24 mOhms (7)
- 34 mOhms (2)
- 4.4 mOhms (1)
- 42 mOhms (3)
- 5.2 mOhms (1)
- 5.5 mOhms (1)
- 51 mOhms (1)
- 56 mOhms (1)
- 6.3 mOhms (1)
- 60 mOhms (2)
- 7.5 mOhms (3)
- 78 mOhms (1)
- 8 mOhms (1)
- 9 mOhms (3)
- 9.3 mOhms (1)
58 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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555
In-stock
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IXYS | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 480 A | 1.5 mOhms | 5 V | 545 nC | Enhancement | HiPerFET | |||
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95
In-stock
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IXYS | MOSFET Polar Power MOSFET HiPerFET | 20 V | Screw Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 295 A | 5.5 mOhms | 5 V | 279 nC | Enhancement | Polar, HiPerFET | |||
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98
In-stock
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IXYS | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 170 V | 260 A | 5.2 mOhms | 5 V | 640 nC | Enhancement | HiPerFET | |||
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654
In-stock
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IXYS | MOSFET 140 Amps 100V 0.011 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 140 A | 11 mOhms | 5 V | 155 nC | Enhancement | PolarHV, HiPerFET | |||
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GET PRICE |
46,820
In-stock
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IR / Infineon | MOSFET MOSFT 150V 104A 11mOhm 77nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 104 A | 9.3 mOhms | 5 V | 77 nC | ||||
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100
In-stock
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IXYS | MOSFET TRENCH HIPERFET PWR MOSFET 100V 420A | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 100 V | 420 A | 2.6 mOhms | 5 V | 670 nC | Enhancement | GigaMOS, HiperFET | ||||
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265
In-stock
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Infineon Technologies | MOSFET 300V, 40A, 69 mOhm 83 nC Qg, TO-220AB | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 300 V | 38 A | 56 mOhms | 5 V | 125 nC | Enhancement | ||||
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450
In-stock
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IXYS | MOSFET 50 Amps 200V 0.06 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 50 A | 60 mOhms | 5 V | 70 nC | Enhancement | PolarHT | |||
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150
In-stock
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IXYS | MOSFET TRENCH HIPERFET PWR MOSFET 100V 420A | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 100 V | 420 A | 2.6 mOhms | 5 V | 670 nC | Enhancement | GigaMOS, HiperFET | ||||
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304
In-stock
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IXYS | MOSFET POLAR HT MOSFET 150V 120A | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 120 A | 16 mOhms | 5 V | 150 nC | Enhancement | PolarHT | |||
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226
In-stock
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IXYS | MOSFET 96 Amps 200V 0.024 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 96 A | 24 mOhms | 5 V | 145 nC | Enhancement | PolarHT, HiPerFET | |||
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188
In-stock
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IXYS | MOSFET TRENCHT2 PWR MOSFET 75V 520A | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 75 V | 520 A | 2.2 mOhms | 5 V | 545 nC | Enhancement | TrenchT2, GigaMOS, HiperFET | ||||
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105
In-stock
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IXYS | MOSFET 133 Amps 100V 0.0075 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 133 A | 9 mOhms | 5 V | 235 nC | Enhancement | Polar, HiPerFET | |||
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246
In-stock
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IXYS | MOSFET 170 Amps 150V 0.013 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 150 A | 13 mOhms | 5 V | 190 nC | Enhancement | PolarHT, HiPerFET | |||
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42
In-stock
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IXYS | MOSFET 140 Amps 200V 0.018 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 115 A | 18 mOhms | 5 V | 240 nC | Enhancement | PolarHT, HiPerFET | |||
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82
In-stock
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IXYS | MOSFET PolarHT HiperFET 100v, 170A | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 170 A | 9 mOhms | 5 V | 198 nC | Enhancement | PolarHT, HiPerFET | |||
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90
In-stock
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IXYS | MOSFET 120 Amps 200V 0.022 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 120 A | 22 mOhms | 5 V | 152 nC | Enhancement | PolarHT, HiPerFET | |||
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68
In-stock
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IXYS | MOSFET 96 Amps 200V 0.024 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 96 A | 24 mOhms | 5 V | 145 nC | Enhancement | PolarHT, HiPerFET | |||
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56
In-stock
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IXYS | MOSFET 74 Amps 200V 0.034 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 74 A | 34 mOhms | 5 V | 107 nC | Enhancement | PolarHT, HiPerFET | |||
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59
In-stock
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IXYS | MOSFET 180 Amps 150V 0.01 Ohm Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 180 A | 10 mOhms | 5 V | 240 nC | Enhancement | PolarHT | |||
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91
In-stock
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IXYS | MOSFET GigaMOS Trench T2 HiperFET Pwr MOSFET | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 170 V | 220 A | 6.3 mOhms | 5 V | 500 nC | Enhancement | GigaMOS, HiperFET | |||
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60
In-stock
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IXYS | MOSFET 110 Amps 100V 0.015 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 110 A | 15 mOhms | 5 V | 110 nC | Enhancement | PolarHT | |||
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71
In-stock
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IXYS | MOSFET 120 Amps 200V 0.022 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 120 A | 22 mOhms | 5 V | 152 nC | Enhancement | PolarHT | |||
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50
In-stock
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IXYS | MOSFET 170A 200V | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 170 A | 11 mOhms | 5 V | 265 nC | Enhancement | GigaMOS | |||
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99
In-stock
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IXYS | MOSFET 150 Amps 150V 0.013 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 150 A | 13 mOhms | 5 V | 190 nC | Enhancement | PolarHT | |||
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46
In-stock
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IXYS | MOSFET 150 Amps 150V 0.013 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 150 A | 13 mOhms | 5 V | 190 nC | Enhancement | PolarHT | |||
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30
In-stock
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IXYS | MOSFET 94 Amps 150V 0.011 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 100 A | 13 mOhms | 5 V | 240 nC | Enhancement | PolarHV, ISOPLUS247, HiPerFET | |||
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25
In-stock
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IXYS | MOSFET 120 Amps 250 V 0.24 Ohm Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 120 A | 24 mOhms | 5 V | 185 nC | Enhancement | PolarHT, HiPerFET | |||
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10
In-stock
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IXYS | MOSFET 120 Amps 250V 0.024 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 120 A | 24 mOhms | 5 V | 185 nC | Enhancement | PolarHT | |||
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30
In-stock
|
IXYS | MOSFET 140 Amps 100V 0.011 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 140 A | 11 mOhms | 5 V | 155 nC | Enhancement | PolarHV, HiPerFET |
