- Manufacture :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
8 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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106
In-stock
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IR / Infineon | MOSFET MOSFT 100V 96A 10mOhm 120nC Qg | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 85 A | 12 mOhms | 5 V | 110 nC | |||||
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825
In-stock
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Infineon Technologies | MOSFET 150V 1 N-CH HEXFET 95mOhms 30nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 24 A | 82 mOhms | 5 V | 30 nC | Enhancement | ||||
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376
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET 54mOhms 60nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 44 A | 54 mOhms | 5 V | 60 nC | Enhancement | ||||
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59
In-stock
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IXYS | MOSFET 130Amps 200V | 30 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 130 A | 16 mOhms | 5 V | 150 nC | Enhancement | ||||
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23
In-stock
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IXYS | MOSFET 86 Amps 200V 29 Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 200 V | 86 A | 29 mOhms | 5 V | 90 nC | Enhancement | |||||
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1,050
In-stock
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IR / Infineon | MOSFET 250V 1 N-CH HEXFET PDP SWITCH | 30 V | SMD/SMT | TO-252-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 45 A | 42 mOhms | 5 V | 72 nC | Enhancement | ||||
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VIEW | IXYS | MOSFET 86 Amps 200V 29 Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 86 A | 29 mOhms | 5 V | 90 nC | Enhancement | ||||
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800
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 15mOhms 71nC | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 85 A | 15 mOhms | 5 V | 71 nC | Enhancement |