- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
932
In-stock
|
Infineon Technologies | MOSFET N-Ch 75V 120A D2PAK-2 OptiMOS 3 | 2.3 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 120 A | 2 mOhms | 3.8 V | 206 nC | OptiMOS | |||
|
|
GET PRICE |
549
In-stock
|
Fairchild Semiconductor | MOSFET 80V 2.7mohm TO220 3L NON JEDEC GREEN EMC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 242 A | 1.96 mOhms | 3.8 V | 150 nC | Enhancement | |||
|
|
GET PRICE |
320
In-stock
|
IXYS | MOSFET SMPD MOSFETs Power Device | 20 V | SMD/SMT | SMPD-24 | - 55 C | + 175 C | Tube | Si | N-Channel | 55 V | 550 A | 1.3 mOhms | 3.8 V | 595 nC | Enhancement | TrenchT2, GigaMOS | |||
|
|
GET PRICE |
1,000
In-stock
|
STMicroelectronics | MOSFET N-CH 100V 2.1mOhm 180A STripFET VI | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 2.5 mOhms | 3.8 V | 180 nC | STripFET |
