- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Tradename :
- Applied Filters :
20 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
90
In-stock
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IXYS | MOSFET 60V/270A TrenchT3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 270 A | 3.1 mOhms | 2 V | 200 nC | Enhancement | HiPerFET | ||
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GET PRICE |
7,873
In-stock
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IR / Infineon | MOSFET N-CHANNEL 75 / 80 | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 124 A | 3.5 mOhms | 2 V | 200 nC | Enhancement | |||
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GET PRICE |
4,703
In-stock
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Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 2.3mOhms 200nC | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 160 A | 1.8 mOhms | 200 nC | Enhancement | Directfet | |||
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GET PRICE |
1,919
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 180A D2PAK-6 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 2 mOhms | 2 V | 200 nC | Enhancement | |||
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GET PRICE |
2,457
In-stock
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Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 1.5mOhms 200nC | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 A | 1.1 mOhms | 200 nC | Enhancement | Directfet | |||
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GET PRICE |
436
In-stock
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Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 2.1mOhms 200nC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 293 A | 1.5 mOhms | 4 V | 200 nC | ||||
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GET PRICE |
1,076
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 180A D2PAK-6 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 2 mOhms | 2 V | 200 nC | Enhancement | |||
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GET PRICE |
346
In-stock
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IR / Infineon | MOSFET 100V N-CH 142A 3.5 mOhm 200nC | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 124 A | 2.8 mOhms | 2 V | 200 nC | Enhancement | Directfet | ||
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GET PRICE |
89
In-stock
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IR / Infineon | MOSFET MOSFT 60V 270A 2.5mOhm 200nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 270 A | 2 mOhms | 4 V | 200 nC | ||||
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GET PRICE |
669
In-stock
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IR / Infineon | MOSFET MOSFET N CH 60V 240A D2PAK | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 240 A | 1.6 mOhms | 3.7 V | 200 nC | StrongIRFET | |||
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GET PRICE |
30
In-stock
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IXYS | MOSFET 60V/270A TrenchT3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | SiC | N-Channel | 60 V | 270 A | 3.1 mOhms | 2 V | 200 nC | Enhancement | HiPerFET | ||
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GET PRICE |
41
In-stock
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IXYS | MOSFET 60V/270A TrenchT3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | SiC | N-Channel | 60 V | 270 A | 3.1 mOhms | 2 V | 200 nC | Enhancement | HiPerFET | ||
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GET PRICE |
4,000
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET DIRECTFET L8 | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 124 A | 2.8 mOhms | 200 nC | Enhancement | Directfet | |||
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VIEW | Infineon Technologies | MOSFET 60V 293A 2.1 mOhm Automotive MOSFET | SMD/SMT | TO-252-3 | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 293 A | 2 mOhms | 200 nC | ||||||||
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VIEW | Infineon Technologies | MOSFET 60V 293A 2.1 mOhm Automotive MOSFET | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 293 A | 2 mOhms | 200 nC | ||||||||
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VIEW | Siliconix / Vishay | MOSFET P-Channel 60V Automotive MOSFET | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | 1 Channel | Si | P-Channel | - 60 V | - 110 A | 0.0071 Ohms | - 2.5 V | 200 nC | Enhancement | TrenchFET | ||||
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VIEW | Siliconix / Vishay | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 120 A | 0.0016 Ohms | 1.5 V | 200 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET 60V 270A 2.5 mOhm Automotive MOSFET | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 293 A | 2 mOhms | 200 nC | ||||||||
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VIEW | Infineon Technologies | MOSFET 60V 270A 2.5 mOhm Automotive MOSFET | SMD/SMT | TO-252-3 | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 270 A | 2 mOhms | 200 nC | ||||||||
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VIEW | IR / Infineon | MOSFET 60V 293A 2.1 mOhm Automotive MOSFET | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 293 A | 2 mOhms | 200 nC |
