- Manufacture :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Tradename :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,872
In-stock
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STMicroelectronics | MOSFET N-channel 68 V, 8.2 mOhm typ., 85 A STripFET DeepGATE... | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 68 V | 85 A | 8.2 mOhms | 2 V | 90 nC | Enhancement | |||||
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121
In-stock
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IR / Infineon | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 60 V | 71 A | 3.3 mOhms | 4 V | 90 nC | Enhancement | |||||
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23
In-stock
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IXYS | MOSFET 86 Amps 200V 29 Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 200 V | 86 A | 29 mOhms | 5 V | 90 nC | Enhancement | |||||
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959
In-stock
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STMicroelectronics | MOSFET N-Ch 300V 0.063Ohm 42A pwr MOSFET | 20 V | Through Hole | TO-220-3 | + 175 C | Tube | 1 Channel | Si | N-Channel | 300 V | 42 A | 63 mOhms | 3 V | 90 nC | ||||||
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574
In-stock
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STMicroelectronics | MOSFET N-Ch 300 V 0.063 Ohm 42 A STripFET(TM) | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 300 V | 42 A | 63 mOhms | 3 V | 90 nC | Enhancement | STripFET | |||
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VIEW | IXYS | MOSFET 86 Amps 200V 29 Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 86 A | 29 mOhms | 5 V | 90 nC | Enhancement | ||||
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GET PRICE |
299,000
In-stock
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IR / Infineon | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 80 A | 2.6 mOhms | 2.2 V | 90 nC | Enhancement | StrongIRFET |
