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Vgs - Gate-Source Voltage :
Packaging :
Transistor Polarity :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Vgs th - Gate-Source Threshold Voltage :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
STP10P6F6
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RFQ
2,691
In-stock
STMicroelectronics MOSFET P-Ch 60V 0.15Ohm 10A pwr MOSFET 20 V Through Hole TO-220-3   + 175 C Tube 1 Channel Si P-Channel - 60 V - 10 A 180 mOhms 4 V 7 nC    
IPA180N10N3 G
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RFQ
1,199
In-stock
Infineon Technologies MOSFET N-Ch 100V 28A TO220FP-3 OptiMOS 3 20 V Through Hole TO-220FP-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 100 V 28 A 18 mOhms   7 nC Enhancement OptiMOS
IRLR7807ZTRPBF
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RFQ
2,290
In-stock
Infineon Technologies MOSFET 30V 1 N-CH HEXFET 13.8mOhms 7nC 20 V SMD/SMT TO-252-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 30 V 43 A 13.8 mOhms 2.25 V 7 nC Enhancement  
STD10P6F6
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RFQ
383
In-stock
STMicroelectronics MOSFET P-Ch 60V 0.15Ohm 10A STripFET VI DeepGate 20 V SMD/SMT TO-252-3   + 175 C Reel 1 Channel Si P-Channel - 60 V - 10 A 180 mOhms 4 V 7 nC    
IRLR7807ZPBF
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RFQ
1,414
In-stock
Infineon Technologies MOSFET 30V 1 N-CH HEXFET 13.8mOhms 7nC 20 V SMD/SMT TO-252-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 30 V 43 A 18.2 mOhms   7 nC Enhancement  
NVD5C688NLT4G
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RFQ
2,500
In-stock
onsemi MOSFET T6 60V LL DPAK +/- 16 V SMD/SMT TO-252-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 60 V 17 A 22.8 mOhms 1.2 V 7 nC Enhancement  
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