- Vgs - Gate-Source Voltage :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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12,192
In-stock
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Siliconix / Vishay | MOSFET P-Channel 20V AEC-Q101 Qualified | +/- 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.9 A | 0.08 Ohms | - 1.5 V | 8 nC | Enhancement | TrenchFET | ||
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4,326
In-stock
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Vishay Semiconductors | MOSFET 20V 7.8A 13.6W AEC-Q101 Qualified | 8 V | SMD/SMT | SC-70-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 20 V | 7.8 A | 0.023 Ohms | 0.45 V | 8 nC | Enhancement | TrenchFET | ||
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2,612
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 13 A | 78 mOhms | 3 V | 8 nC | Enhancement | |||
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3,200
In-stock
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STMicroelectronics | MOSFET N-Ch 30V 0.0061Ohm 65A pwr STripFET V | 22 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 65 A | 6 mOhms | 1.8 V | 8 nC |
